Microdefects in heavily phosphorus-doped Czochralski silicon

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發(fā)布日期: 2021-04-10
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重?fù)搅字崩鑶尉У奈⑷毕荩蹑?zhèn)輝，馬向陽，本文研究了重?fù)搅字崩鑶尉е醒醭恋砗土鲃訄D案兩種微缺陷以及它們之間的相互關(guān)系.兩步法高溫?zé)崽幚碛糜谛纬裳醭恋?研究表明體微?

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上一篇：Rapid thermal processing phosphorus gettering of multicrystalline silicon
下一篇：metal-Phosphorus Bonding in Complexes W@Au12PX3 （X = H F Cl Br I） - Relativistic DFT Investigations

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Microdefects in heavily phosphorus-doped Czochralski silicon

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